Abstract: GaN HEMT devices exhibit lower short-circuit capability, posing significant risks in practical applications. This paper presents a fast short circuit (SC) protection circuit for ohmic gate P ...
Abstract: Impact of strain of sub-3 nm gate-all-around (GAA) CMOS transistors on the circuit performance is evaluated using a neural compact model. The model was trained using 3D technology ...
From traditional fuses to eFuses, understanding the advantages, limitations, and use cases of each technology helps engineers ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback